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用于汽车和节能应用的电力电子半导体材料——碳化硅、氮化镓、氧化镓和金刚石。

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, GaO, and Diamond.

作者信息

Wellmann Peter J

机构信息

Crystal Growth Lab Materials Department 6 (i-meet) Friedrich-Alexander University of Erlangen-Nürnberg Martensstr. 7 91058 Erlangen Germany.

出版信息

Z Anorg Allg Chem. 2017 Nov 17;643(21):1312-1322. doi: 10.1002/zaac.201700270. Epub 2017 Oct 20.

Abstract

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.

摘要

电力电子学属于未来的关键技术,有助于提高汽车和节能应用中的系统效率及性能。几十年来,硅一直是电子开关的主要材料。先进的制造工艺和复杂的电子器件设计已将硅电子器件的性能优化至几乎接近其理论极限。因此,为提高系统性能,需要探索具有超越硅的物理和化学性质的新材料。一些宽带隙半导体,如碳化硅、氮化镓、氧化镓和金刚石,展现出卓越的特性,有望引领达到新的性能水平。本综述将通过(i)突出这些材料的特性、(ii)介绍材料生长中的挑战以及(iii)概述在材料加工中需要创新步骤以超越现有技术的局限来介绍这些材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d6a/5698769/425096bedd1e/ZAAC-643-1312-g002.jpg

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