Recent progress of GaO materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method.

Compared with silicon, gallium nitride, silicon carbide, and other traditional semiconductors, gallium oxide (GaO) who possesses, an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers, especially for the potential application in power devices. Moreover, GaO material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap. These future commercial applications put forward an urgent require for high-quality epitaxial GaO material in an efficient growth method at a lower cost. Although there are some conventional methods for single crystal GaO film epitaxial growth such as MBE and MOCVD, these methods always need a vacuum growth environment and expensive equipment. As a fast-growing method, Mist-CVD gives the growth of GaO in a vacuum-free, process-simple, and low-cost method, which will greatly reduce the cost and facilitate the development of GaO. This review has summarizes the Mist-CVD epitaxy growth mechanism of GaO, recent progress in the GaO film epitaxial growth, and various device properties based on the Mist-CVD method. Our work aims to provide help for the development of GaO material growth and device applications.