Kulesh N A, Vázquez M, Lepalovskij V N, Vas'kovskiy V O
Ural Federal University, 620002 Ekaterinburg, Russia. Insitute of Materials Science of Madrid, CSIC, E-28049 Madrid, Spain.
Nanotechnology. 2018 Feb 9;29(6):065301. doi: 10.1088/1361-6528/aaa2b8.
Hysteresis properties and magnetization reversal in TbCo(30 nm) and FeNi(10 nm)/TbCo(30 nm) films with nanoscale antidot lattices are investigated to test the effect of nanoholes on the perpendicular anisotropy in the TbCo layer and the induced exchange bias in the FeNi layer. The antidots are introduced by depositing the films on top of hexagonally ordered porous anodic alumina substrates with pore diameter and interpore distance fixed to 75 nm and 105 nm, respectively. The analysis of combined vibrating sample magnetometry, Kerr microscopy and magnetic force microscopy imaging measurements has allowed us to link macroscopic and local magnetization reversal processes. For magnetically hard TbCo films, we demonstrate the tunability of magnetic anisotropy and coercive field (i.e., it increases from 0.2 T for the continuous film to 0.5 T for the antidot film). For the antidot FeNi/TbCo film, magnetization of FeNi is confirmed to be in plane. Although an exchange bias has been locally detected in the FeNi layer, the integrated hysteresis loop has increased coercivity and zero shift along the field axis due to the significantly decreased magnetic anisotropy of TbCo layer.
研究了具有纳米级反点阵晶格的TbCo(30纳米)和FeNi(10纳米)/TbCo(30纳米)薄膜的磁滞特性和磁化反转,以测试纳米孔对TbCo层垂直各向异性以及FeNi层中诱导交换偏置的影响。通过将薄膜沉积在孔径和孔间距分别固定为75纳米和105纳米的六边形有序多孔阳极氧化铝衬底上引入反点阵。结合振动样品磁强计、克尔显微镜和磁力显微镜成像测量的分析,使我们能够将宏观和局部磁化反转过程联系起来。对于硬磁TbCo薄膜,我们证明了磁各向异性和矫顽场的可调性(即,从连续薄膜的0.2特斯拉增加到反点阵薄膜的0.5特斯拉)。对于反点阵FeNi/TbCo薄膜,确认FeNi的磁化是面内的。尽管在FeNi层中局部检测到了交换偏置,但由于TbCo层磁各向异性显著降低,积分磁滞回线的矫顽力增加且沿场轴零偏移。