Salaheldeen Mohamed, Abu-Dief Ahmed Mohamed, Martínez-Goyeneche Lucía, Alzahrani Seraj Omar, Alkhatib Fatmah, Álvarez-Alonso Pablo, Blanco Jesús Ángel
Physics Department, Faculty of Science, Sohag University, Sohag 82524, Egypt.
Departamento de Física, Universidad de Oviedo, C/Calvo Sotelo 18, 33007 Oviedo, Spain.
Materials (Basel). 2020 Dec 18;13(24):5788. doi: 10.3390/ma13245788.
Fe-Pd magnetic shape-memory alloys are of major importance for microsystem applications due to their magnetically driven large reversible strains under moderate stresses. In this context, we focus on the synthesis of nanostructured FePd shape-memory alloy antidot array thin films with different layer thicknesses in the range from 20 nm to 80 nm, deposited onto nanostructured alumina membranes. A significant change in the magnetization process of nanostructured samples was detected by varying the layer thickness. The in-plane coercivity for the antidot array samples increased with decreasing layer thickness, whereas for non-patterned films the coercive field decreased. Anomalous coercivity dependence with temperature was detected for thinner antidot array samples, observing a critical temperature at which the in-plane coercivity behavior changed. A significant reduction in the Curie temperature for antidot samples with thinner layer thicknesses was observed. We attribute these effects to complex magnetization reversal processes and the three-dimensional magnetization profile induced by the nanoholes. These findings could be of major interest in the development of novel magnetic sensors and thermo-magnetic recording patterned media based on template-assisted deposition techniques.
铁钯磁性形状记忆合金由于在中等应力下具有磁驱动的大可逆应变,在微系统应用中具有重要意义。在此背景下,我们专注于合成纳米结构的铁钯形状记忆合金反点阵阵列薄膜,其层厚度在20纳米至80纳米范围内,沉积在纳米结构的氧化铝膜上。通过改变层厚度,检测到纳米结构样品的磁化过程发生了显著变化。反点阵阵列样品的面内矫顽力随层厚度的减小而增加,而非图案化薄膜的矫顽场则减小。对于较薄的反点阵阵列样品,检测到矫顽力与温度的异常依赖关系,观察到面内矫顽力行为发生变化的临界温度。观察到层厚度较薄的反点阵样品的居里温度显著降低。我们将这些效应归因于复杂的磁化反转过程以及纳米孔诱导的三维磁化分布。这些发现可能对基于模板辅助沉积技术的新型磁传感器和热磁记录图案化介质的开发具有重要意义。