School of Electrical & Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University , 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Republic of Korea.
ACS Appl Mater Interfaces. 2018 Jan 17;10(2):1828-1835. doi: 10.1021/acsami.7b16214. Epub 2018 Jan 2.
A highly flexible resistive switching (RS) memory was fabricated in the Al/TiO/Al/polyimide structure using a simple and cost-effective method. An electronic-resistive-switching-based flexible memory with high performance that can withstand a bending strain of up to 3.6% was obtained. The RS properties showed no obvious degradation even after the bending tests that were conducted up to 10 000 times, and over 4000 writing/erasing cycles were confirmed at the maximally bent state. The superior electrical properties against the mechanical stress of the device can be ascribed to the electronic RS mechanism related to electron trapping/detrapping, which can prevent the inevitable degradation in the case of the RS related with the ionic defects.
采用简单且经济高效的方法，在 Al/TiO/Al/聚酰亚胺结构中制备了一种高柔韧性的电阻式开关（RS）存储器。得到了一种基于电子电阻开关的柔性存储器，其性能优异，可承受高达 3.6%的弯曲应变。即使经过多达 10000 次的弯曲测试，RS 性能也没有明显下降，并且在最大弯曲状态下确认了超过 4000 次的写入/擦除循环。该器件对机械应力具有优异的电性能，这可归因于与电子俘获/释放相关的电子 RS 机制，该机制可防止与离子缺陷相关的 RS 出现不可避免的退化。
