Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea.
Department of Electronic Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea.
Molecules. 2023 Jul 3;28(13):5174. doi: 10.3390/molecules28135174.
This study proposes a high-performance organic-inorganic hybrid memristor for the development of neuromorphic devices in the memristor-based artificial synapse. The memristor consists of a solid polymer electrolyte (SPE) chitosan layer and a titanium oxide (TiO) layer grown with a low-thermal-budget, microwave-assisted oxidation. The fabricated Ti/SPE-chitosan/TiO/Pt-structured memristor exhibited steady bipolar resistive switching (BRS) characteristics and demonstrated excellent endurance in 100-cycle repetition tests. Compared to SPE-chitosan memristors without a TiO layer, the proposed organic-inorganic hybrid memristor demonstrated a higher dynamic range and a higher response to pre-synaptic stimuli such as short-term plasticity via paired-pulse facilitation. The effect of adding the TiO layer on the BRS properties was examined, and the results showed that the TiO layer improved the chemical and electrical superiority of the proposed memristor synaptic device. The proposed SPE-chitosan organic-inorganic hybrid memristor also exhibited a stable spike-timing-dependent plasticity, which closely mimics long-term plasticity. The potentiation and depression behaviors that modulate synaptic weights operated stably via repeated spike cycle tests. Therefore, the proposed SPE-chitosan organic-inorganic hybrid memristor is a promising candidate for the development of neuromorphic devices in memristor-based artificial synapses owing to its excellent stability, high dynamic range, and superior response to pre-synaptic stimuli.
本研究提出了一种高性能的有机-无机混合忆阻器，用于基于忆阻器的人工突触中的神经形态器件的开发。该忆阻器由固态聚合物电解质（SPE）壳聚糖层和使用低热预算、微波辅助氧化生长的氧化钛（TiO）层组成。所制备的 Ti/SPE-壳聚糖/TiO/Pt 结构的忆阻器表现出稳定的双极性电阻开关（BRS）特性，并在 100 个循环重复测试中表现出优异的耐久性。与没有 TiO 层的 SPE-壳聚糖忆阻器相比，所提出的有机-无机混合忆阻器通过成对脉冲促进表现出更高的动态范围和对短程可塑性等前突触刺激的更高响应。研究了添加 TiO 层对 BRS 性能的影响，结果表明，TiO 层改善了所提出的忆阻器突触器件的化学和电学优越性。所提出的 SPE-壳聚糖有机-无机混合忆阻器还表现出稳定的尖峰时间依赖性可塑性，这与长期可塑性密切匹配。通过重复尖峰周期测试，调制突触权重的增强和抑制行为稳定运行。因此，由于其出色的稳定性、高动态范围和对前突触刺激的优越响应，所提出的 SPE-壳聚糖有机-无机混合忆阻器有望成为基于忆阻器的人工突触中神经形态器件的开发的候选者。
