Hemasiri Bastian Waduge Naveen Harindu, Kim Jae-Kwan, Lee Ji-Myon
Department of Printed Electronics Engineering, Sunchon National University, Suncheon, Jeonnam, 57922, South Korea.
Sci Rep. 2017 Dec 19;7(1):17868. doi: 10.1038/s41598-017-18063-w.
Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was synthesized by a two-step process: 10 wt. % tin-doped ITO thin films were produced by an environmentally friendly aqueous sol-gel spin coating technique with economical salts of In(NO).HO and SnCl, without using organic additives, on surface free energy enhanced (from 53.826 to 97.698 mJm) glass substrate by oxygen plasma treatment, which facilitated void-free continuous ITO film due to high surface wetting. The chemical vapor deposited monolayer graphene was transferred onto the synthesized ITO to enhance its electrical properties and it was capable of reducing sheet resistance over 12% while preserving the bi-film surface smoother. The ITO films contain the InO phase only and exhibit the polycrystalline nature of cubic structure with 14.35 ± 0.5 nm crystallite size. The graphene/ITO bi-film exhibits reproducible optical transparency with 88.66% transmittance at 550 nm wavelength, and electrical conductivity with sheet resistance of 117 Ω/sq which is much lower than that of individual sol-gel derived ITO film.
氧化铟锡（ITO）仍然是高性能光电器件的主要候选材料，但在基于溶胶 - 凝胶的合成技术发展中，对于绿色环保和更高电导率存在至关重要的要求。通过两步法合成了石墨烯/ITO透明双膜：采用环境友好的水性溶胶 - 凝胶旋涂技术，使用In(NO₃)·H₂O和SnCl₂的经济盐类，在经氧等离子体处理使表面自由能增强（从53.826增加到97.698 mJ/m²）的玻璃基板上制备10 wt.%锡掺杂的ITO薄膜，由于高表面润湿性，这有助于形成无空隙的连续ITO膜。将化学气相沉积的单层石墨烯转移到合成的ITO上以增强其电学性能，并且能够在保持双膜表面更光滑的同时将方阻降低超过12%。ITO薄膜仅包含In₂O₃相，呈现立方结构的多晶性质，晶粒尺寸为14.35 ± 0.5 nm。石墨烯/ITO双膜在550 nm波长处具有88.66%的可重复光学透过率，以及117 Ω/sq的方阻所对应的电导率，这远低于单独的溶胶 - 凝胶衍生的ITO薄膜。
