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基于无光刻电阻测温法的技术,用于精确测量有机和无机薄膜的塞贝克系数和电导率。

Lithography-free resistance thermometry based technique to accurately measure Seebeck coefficient and electrical conductivity for organic and inorganic thin films.

作者信息

Kumar Pawan, Repaka D V Maheswar, Hippalgaonkar Kedar

机构信息

Institute of Materials Research and Engineering, Agency for Science Technology and Research, #08-03, 2 Fusionopolis Way, Innovis, Singapore 138634.

出版信息

Rev Sci Instrum. 2017 Dec;88(12):125112. doi: 10.1063/1.5012039.

DOI:10.1063/1.5012039
PMID:29289178
Abstract

We have developed a new and accurate technique to measure temperature dependent in-plane Seebeck coefficient and electrical conductivity of organic and inorganic thin films. The measurement device consists of one heater, two thermometers, and a four-probe configuration which is patterned on a substrate of choice using a simple shadow mask. The high resolution in temperature measurements and repeatability of resistance thermometry is leveraged while enabling simple implementation using only a shadow mask for patterning. We calibrate the technique using nickel and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin films. The error bar for the Seebeck coefficient is less than 1%, almost 10 times better than complementary techniques for thin films. Moreover, our method enables high-throughput characterization of thermoelectric properties of a variety of different large area inorganic and organic thin films that can be prepared by spin coating, drop casting, evaporation, sputtering, or any other growth technique and hence has potential for wide usage in the thermoelectrics and nanoscale transport community to study thin films.

摘要

我们开发了一种全新且精确的技术,用于测量有机和无机薄膜随温度变化的面内塞贝克系数和电导率。该测量装置由一个加热器、两个温度计以及一个四探针配置组成,使用简单的荫罩在选定的基板上进行图案化制作。利用了电阻温度计在温度测量方面的高分辨率和可重复性,同时仅通过荫罩进行图案化就能实现简单的制作。我们使用镍和聚(3,4 - 亚乙基二氧噻吩):聚(苯乙烯磺酸盐)薄膜对该技术进行校准。塞贝克系数的误差条小于1%,几乎比薄膜的互补技术好10倍。此外,我们的方法能够对通过旋涂、滴铸、蒸发、溅射或任何其他生长技术制备的各种不同大面积无机和有机薄膜的热电性能进行高通量表征,因此在热电学和纳米尺度输运领域研究薄膜方面具有广泛应用的潜力。

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