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晶体结构中涉及锗和锡的紧密接触:四元键的实验证据。

Close contacts involving germanium and tin in crystal structures: experimental evidence of tetrel bonds.

作者信息

Scilabra Patrick, Kumar Vijith, Ursini Maurizio, Resnati Giuseppe

机构信息

NFMLab-D.C.M.I.C. "Giulio Natta", Politecnico di Milano, Via L. Mancinelli 7, 20131, Milan, Italy.

出版信息

J Mol Model. 2018 Jan 8;24(1):37. doi: 10.1007/s00894-017-3573-8.

Abstract

Modeling indicates the presence of a region of low electronic density (a "σ-hole") on group 14 elements, and this offers an explanation for the ability of these elements to act as electrophilic sites and to form attractive interactions with nucleophiles. While many papers have described theoretical investigations of interactions involving carbon and silicon, such investigations of the heavier group 14 elements are relatively scarce. The purpose of this review is to rectify, to some extent, the current lack of experimental data on interactions formed by germanium and tin with nucleophiles. A survey of crystal structures in the Cambridge Structural Database is reported. This survey reveals that close contacts between Ge or Sn and lone-pair-possessing atoms are quite common, they can be either intra- or intermolecular contacts, and they are usually oriented along the extension of the covalent bond formed by the tetrel with the most electron-withdrawing substituent. Several examples are discussed in which germanium and tin atoms bear four carbon residues or in which halogen, oxygen, sulfur, or nitrogen substituents replace one, two, or three of those carbon residues. These close contacts are assumed to be the result of attractive interactions between the involved atoms and afford experimental evidence of the ability of germanium and tin to act as electrophilic sites, namely tetrel bond (TB) donors. This ability can govern the conformations and the packing of organic derivatives in the solid state. TBs can therefore be considered a promising and robust tool for crystal engineering. Graphical abstract Intra- and intermolecular tetrel bonds involving organogermanium and -tin derivatives in crystalline solids.

摘要

建模表明,第14族元素上存在低电子密度区域(“σ-空穴”),这为这些元素作为亲电位点并与亲核试剂形成吸引相互作用的能力提供了解释。虽然许多论文描述了涉及碳和硅相互作用的理论研究,但对较重的第14族元素的此类研究相对较少。本综述的目的是在一定程度上纠正目前锗和锡与亲核试剂形成相互作用的实验数据不足的情况。报道了对剑桥结构数据库中晶体结构的调查。该调查表明,锗或锡与具有孤对电子的原子之间的紧密接触相当常见,它们可以是分子内或分子间接触,并且通常沿着由四价元素与吸电子能力最强的取代基形成的共价键的延伸方向排列。讨论了几个例子,其中锗和锡原子带有四个碳残基,或者卤素、氧、硫或氮取代基取代了其中一个、两个或三个碳残基。这些紧密接触被认为是相关原子之间吸引相互作用的结果,并为锗和锡作为亲电位点(即四价元素键(TB)供体)的能力提供了实验证据。这种能力可以控制固态有机衍生物的构象和堆积。因此,TB可以被认为是晶体工程中一种有前途且强大的工具。图形摘要 晶体固体中涉及有机锗和有机锡衍生物的分子内和分子间四价元素键。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1392/5758658/93f73d38c9e2/894_2017_3573_Figa_HTML.jpg

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