Li Chien-Yu, Cheng Min-Yu, Houng Mau-Phon, Yang Cheng-Fu, Liu Jing
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, Taiwan.
Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Road, Nan-Tzu District, Kaohsiung 811, Taiwan.
Materials (Basel). 2018 Jan 8;11(1):90. doi: 10.3390/ma11010090.
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlO guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H₂ plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlO guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlO guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm²@100 V), and a Schottky barrier height of 1.074 eV.
在本研究中，介绍了在硅表面进行氢等离子体处理并带有AlO保护环的AZO/n-Si肖特基势垒二极管（SBD）的设计与制造。在30瓦H₂等离子体处理后的清洗过程之后，硅表面表现出更少的界面缺陷，这改善了后续形成的SBD的开关特性。还在400°C进行了快速热退火实验以提高SBD的击穿电压。通过在SBD侧面采用原子层沉积（ALD）沉积的AlO保护环结构，也抑制了SBD的边缘效应。实验结果表明，添加AlO保护环后反向漏电流减小且击穿电压增加。该研究中开发的二极管及制造技术适用于实现具有高击穿电压（>200 V）、低反向漏电流密度（≤72 μA/mm²@100 V）以及1.074 eV肖特基势垒高度的SBD。
