Kim Dong-Hyeon, Min Seong-Ji, Oh Jong-Min, Koo Sang-Mo
Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.
Materials (Basel). 2020 Sep 29;13(19):4335. doi: 10.3390/ma13194335.
The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density-voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes.
研究了快速热退火（RTA）对采用射频溅射法沉积在碳化硅（SiC）衬底上的氧化氮化铝（AlN）薄膜制成的肖特基势垒二极管（SBD）的影响。对于测量温度范围为300 K至450 K的情况，退火后的SBD器件与未退火器件相比，开/关电流比提高了10倍。从电流密度-电压（J-V）特性得出的理想因子在退火后增加了约2.2倍，而势垒高度从约0.91 eV降至约0.68 eV。此外，俄歇电子能谱表明AlN薄膜中原子氧的浓度降低，从退火前的约36%降至退火后的约24%。这可能是退火后的AlN/SiC二极管势垒高度降低和开/关比提高的原因。
