Department of Materials Science and Engineering, KAIST, Daejeon, 305-701, Korea.
Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA.
Sci Rep. 2018 Jan 9;8(1):203. doi: 10.1038/s41598-017-18482-9.
We have studied the ferroelectric domains in (001) BiFeO (BFO) films patterned into mesas with various aspect ratios, using angle-resolved piezoresponse force microscope (AR-PFM), which can image the in-plane polarization component with an angular resolution of 30°. We observed not only stable polarization variants, but also meta-stable polarization variants, which can reduce the charge accumulated at domain boundaries. We considered the number of neighboring domains that are in contact, in order to analyze the complexity of the ferroelectric domain structure. Comparison of the ferroelectric domains from the patterned and unpatterned regions showed that the elastic relaxation induced by removal of the film surrounding the mesas led to a reduction of the average number of neighboring domains, indicative of a decrease in domain complexity. We also found that the rectangular BFO patterns with high aspect ratio had a simpler domain configuration and enhanced piezoelectric characteristics than square-shaped mesas. Manipulation of the ferroelectric domains by controlling the aspect ratio of the patterned BFO thin film mesas can be useful for nanoelectronic applications.
我们使用角度分辨压电力显微镜(AR-PFM)研究了具有不同纵横比的(001)BiFeO(BFO)膜中的铁电畴,该显微镜具有 30°角分辨率,可成像面内极化分量。我们不仅观察到了稳定的极化变体,还观察到了亚稳定的极化变体,这可以减少畴界处积累的电荷。我们考虑了相邻畴的数量,以便分析铁电畴结构的复杂性。对比图案化和非图案化区域的铁电畴表明,去除 mesa 周围的薄膜引起的弹性弛豫导致相邻畴的平均数量减少,表明畴复杂性降低。我们还发现,具有高纵横比的矩形 BFO 图案具有比正方形 mesa 更简单的畴结构和增强的压电特性。通过控制图案化 BFO 薄膜 mesa 的纵横比来操纵铁电畴,这对于纳米电子应用可能是有用的。