Wolf S, Zwickel H, Kieninger C, Lauermann M, Hartmann W, Kutuvantavida Y, Freude W, Randel S, Koos C
Opt Express. 2018 Jan 8;26(1):220-232. doi: 10.1364/OE.26.000220.
We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a π-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 V, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit.
我们展示了使用基于硅的同相/正交（IQ）调制器在高达100 GBd的符号速率下生成高阶调制格式。我们的器件利用了硅有机混合（SOH）集成的优势，该集成将绝缘体上硅波导与高效的有机电光（EO）包层材料相结合，以实现低驱动电压和亚毫米级的器件长度。在我们的实验中，我们使用了一个π电压为1.6 V的SOH IQ调制器来生成100 GBd的16QAM信号。这是首次在半导体衬底上实现的IQ调制器达到100 GBd的速率，从而实现了400 Gbit/s的单偏振线速率。峰峰值驱动电压为1.5 V，对应调制器中仅25 fJ/bit的电能耗散。
