Korn Dietmar, Palmer Robert, Yu Hui, Schindler Philipp C, Alloatti Luca, Baier Moritz, Schmogrow René, Bogaerts Wim, Selvaraja Shankar Kumar, Lepage Guy, Pantouvaki Marianna, Wouters Johan M D, Verheyen Peter, Van Campenhout Joris, Chen Baoquan, Baets Roel, Absil Philippe, Dinu Raluca, Koos Christian, Freude Wolfgang, Leuthold Juerg
Karlsruhe Institute of Technology (KIT), Institutes IPQ and IMT, Karlsruhe, Germany.
Opt Express. 2013 Jun 3;21(11):13219-27. doi: 10.1364/OE.21.013219.
Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.
先进的调制格式需要合适的IQ调制器。我们利用绝缘体上硅（SOI）平台，通过用有机χ(2)非线性包层对光子集成电路进行功能化，来利用线性电光效应。我们证明，这种硅有机混合（SOH）技术能够制造出用于生成数据速率高达112 Gbit/s的16QAM信号的IQ调制器。据我们所知，这是目前硅集成调制器所实现的最高单偏振数据速率。我们发现其能耗为640 fJ/比特。
