Lauermann M, Weimann C, Knopf A, Heni W, Palmer R, Koeber S, Elder D L, Bogaerts W, Leuthold J, Dalton L R, Rembe C, Freude W, Koos C
Opt Express. 2016 May 30;24(11):11694-707. doi: 10.1364/OE.24.011694.
We demonstrate for the first time a waveguide-based frequency shifter on the silicon photonic platform using single-sideband modulation. The device is based on silicon-organic hybrid (SOH) electro-optic modulators, which combine conventional silicon-on-insulator waveguides with highly efficient electro-optic cladding materials. Using small-signal modulation, we demonstrate frequency shifts of up to 10 GHz. We further show large-signal modulation with optimized waveforms, enabling a conversion efficiency of -5.8 dB while suppressing spurious side-modes by more than 23 dB. In contrast to conventional acousto-optic frequency shifters, our devices lend themselves to large-scale integration on silicon substrates, while enabling frequency shifts that are several orders of magnitude larger than those demonstrated with all-silicon serrodyne devices.
我们首次展示了一种基于硅光子平台、采用单边带调制的波导型移频器。该器件基于硅有机混合（SOH）电光调制器，它将传统的绝缘体上硅波导与高效电光包层材料相结合。通过小信号调制，我们展示了高达10 GHz的频移。我们还展示了具有优化波形的大信号调制，实现了-5.8 dB的转换效率，同时将杂散边模抑制超过23 dB。与传统的声光移频器相比，我们的器件便于在硅衬底上进行大规模集成，同时实现比全硅锯齿波器件所展示的频移大几个数量级的频移。
