六方氮化硼的共振X射线发射
Resonant X-ray Emission of Hexagonal Boron Nitride.
作者信息
Vinson John, Jach Terrence, Müller Matthias, Unterumsberger Rainer, Beckhoff Burkhard
机构信息
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899.
Physikalisch-Technische Bundesanstalt, Abbestraße 2-12, 10587 Berlin, Germany.
出版信息
Phys Rev B. 2017 Nov 15;96(20). doi: 10.1103/PhysRevB.96.205116. Epub 2017 Nov 9.
Abstract
The electronic structure of hexagonal boron nitride (BN) is explored using measurements of x-ray absorption and resonant inelastic x-ray scattering (RIXS) at the nitrogen K edge (1) in tandem with calculations using many-body perturbation theory within the and Bethe-Salpeter equation (BSE) approximations. Our calculations include the effects of lattice disorder from phonons activated thermally and from zero point energy. They highlight the influence of disorder on near-edge x-ray spectra.
摘要
利用氮K边（1）的X射线吸收和共振非弹性X射线散射（RIXS）测量，并结合在GW和贝叶斯-萨尔皮特方程（BSE）近似下使用多体微扰理论进行的计算，对六方氮化硼（BN）的电子结构进行了探索。我们的计算包括热激活声子和零点能量引起的晶格无序效应。它们突出了无序对近边X射线光谱的影响。
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