Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Institute of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore.
Adv Mater. 2018 Mar;30(9). doi: 10.1002/adma.201705509. Epub 2018 Jan 15.
Nanostructured transition metal dichalcogenides (TMDs) are proven to be efficient and robust earth-abundant electrocatalysts to potentially replace precious platinum-based catalysts for the hydrogen evolution reaction (HER). However, the catalytic efficiency of reported TMD catalysts is still limited by their low-density active sites, low conductivity, and/or uncleaned surface. Herein, a general and facile method is reported for high-yield, large-scale production of water-dispersed, ultrasmall-sized, high-percentage 1T-phase, single-layer TMD nanodots with high-density active edge sites and clean surface, including MoS , WS , MoSe , Mo W S , and MoSSe, which exhibit much enhanced electrochemical HER performances as compared to their corresponding nanosheets. Impressively, the obtained MoSSe nanodots achieve a low overpotential of -140 mV at current density of 10 mA cm , a Tafel slope of 40 mV dec , and excellent long-term durability. The experimental and theoretical results suggest that the excellent catalytic activity of MoSSe nanodots is attributed to the high-density active edge sites, high-percentage metallic 1T phase, alloying effect and basal-plane Se-vacancy. This work provides a universal and effective way toward the synthesis of TMD nanostructures with abundant active sites for electrocatalysis, which can also be used for other applications such as batteries, sensors, and bioimaging.
纳米结构的过渡金属二硫属化物(TMDs)已被证明是高效且稳定的、丰富的地球元素电催化剂,有望替代昂贵的基于铂的析氢反应(HER)催化剂。然而,所报道的 TMD 催化剂的催化效率仍然受到其低密度活性位、低电导率和/或未清洁表面的限制。本文报道了一种通用且简便的方法,用于高产率、大规模制备水分散的、超小尺寸、高百分比 1T 相、单层 TMD 纳米点,具有高密度活性边缘位和清洁表面,包括 MoS 、WS 、MoSe 、Mo W S 和 MoSSe,与相应的纳米片相比,它们表现出增强的电化学 HER 性能。令人印象深刻的是,所获得的 MoSSe 纳米点在 10 mA cm 的电流密度下表现出低过电势为-140 mV,塔菲尔斜率为 40 mV dec,以及优异的长期耐久性。实验和理论结果表明,MoSSe 纳米点的优异催化活性归因于高密度活性边缘位、高百分比的金属 1T 相、合金效应和基面 Se 空位。这项工作为具有丰富电催化活性位的 TMD 纳米结构的合成提供了一种通用且有效的方法,该方法也可用于电池、传感器和生物成像等其他应用。