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硅中的空间电荷限制电流和巨大的线性磁电阻。

The space charge limited current and huge linear magnetoresistance in silicon.

机构信息

Department of Physics, Capital Normal University, Beijing, 100048, P.R. China.

Beijing Key Laboratory of Metamaterials and Devices, Beijing, 100048, P.R. China.

出版信息

Sci Rep. 2018 Jan 15;8(1):775. doi: 10.1038/s41598-017-19022-1.

Abstract

Huge magnetoresistance in space charge regime attracts broad interest on non-equilibrium carrier transport under high electric field. However, the accurate fitting for the current-voltage curves from Ohmic to space charge regime under magnetic fields has not been achieved quantitatively. We conjecture that the localized intensive charge dynamic should be taken into consideration. Here, by introducing a field-dependent dielectric constant, for the first time, we successfully simulate the current-voltage curves of covalent crystal silicon wafers under different magnetic fields (0-1 Tesla). The simulation reveals that the optical phonon, instead of the acoustic phonon, plays a major role for the carriers transport under magnetic fields in space charge regime.

摘要

在高电场下的非平衡载流子输运中,空间电荷区的巨大磁电阻引起了广泛的关注。然而,在磁场下,从欧姆区到空间电荷区的电流-电压曲线的精确拟合尚未得到定量的实现。我们推测应该考虑局部密集电荷动态。在这里,我们首次通过引入一个依赖于场的介电常数,成功地模拟了不同磁场(0-1 特斯拉)下共价晶体硅片的电流-电压曲线。模拟结果表明,在磁场的空间电荷区中,光声子而不是声波子对载流子输运起主要作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1278/5768776/fa7ce4049380/41598_2017_19022_Fig1_HTML.jpg

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