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二维半导体中激子复合物的控制动态筛选。

Controlled dynamic screening of excitonic complexes in 2D semiconductors.

机构信息

Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA.

Department of Physics, Freie University, Berlin, 14195, Germany.

出版信息

Sci Rep. 2018 Jan 15;8(1):768. doi: 10.1038/s41598-017-18803-y.

DOI:10.1038/s41598-017-18803-y
PMID:29335642
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5768700/
Abstract

We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of the dynamic screening is then reduced to simply solving the Schrodinger equation with an effectively frequency-independent potential. Quantitative predictions of the model are experimentally verified using a test system: neutral, charged and defect-bound excitons in two-dimensional monolayer WS, screened by metallic, liquid, and semiconducting environments. The screening-induced shifts of the excitonic peaks in photoluminescence spectra are in good agreement with our model.

摘要

我们报告了一项关于在具有频率相关介电函数的介质中动态筛选激子的理论/实验综合研究。我们开发了一个分析模型,表明在激子中,粒子间相互作用在从零到特征束缚能的频率范围内被屏蔽,这取决于该激子的对称性和跃迁能量。然后,动态屏蔽问题简化为用有效频率独立的势来简单地求解薛定谔方程。我们使用一个测试系统实验验证了该模型的定量预测:二维单层 WS 中的中性、带电和缺陷束缚激子,由金属、液体和半导体环境屏蔽。光致发光光谱中激子峰的屏蔽诱导位移与我们的模型很好地吻合。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad02/5768700/ff407f720d36/41598_2017_18803_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad02/5768700/d48a3aef8829/41598_2017_18803_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad02/5768700/ff407f720d36/41598_2017_18803_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad02/5768700/d48a3aef8829/41598_2017_18803_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad02/5768700/ff407f720d36/41598_2017_18803_Fig2_HTML.jpg

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本文引用的文献

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Ultrafast Coulomb-Induced Intervalley Coupling in Atomically Thin WS2.原子层厚 WS2 中的超快库仑诱导能带谷耦合
Nano Lett. 2016 May 11;16(5):2945-50. doi: 10.1021/acs.nanolett.5b04733. Epub 2016 Apr 25.
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Experimental Evidence for Dark Excitons in Monolayer WSe_{2}.单层WSe₂中暗激子的实验证据
Phys Rev Lett. 2015 Dec 18;115(25):257403. doi: 10.1103/PhysRevLett.115.257403. Epub 2015 Dec 15.
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Dielectric screening of excitons in monolayer graphene.单层石墨烯中激子的介电屏蔽
Nanoscale. 2015 Nov 21;7(43):18015-9. doi: 10.1039/c5nr04800a.
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Electrical Tuning of Exciton Binding Energies in Monolayer WS_{2}.单层 WS_{2}中激子结合能的电调谐。
Phys Rev Lett. 2015 Sep 18;115(12):126802. doi: 10.1103/PhysRevLett.115.126802. Epub 2015 Sep 16.
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Sci Rep. 2015 Mar 18;5:9218. doi: 10.1038/srep09218.
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Electronic structure of epitaxial single-layer MoS2.外延单层 MoS2 的电子结构。
Phys Rev Lett. 2015 Jan 30;114(4):046802. doi: 10.1103/PhysRevLett.114.046802. Epub 2015 Jan 29.
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Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides.缺陷诱导的单层半导体过渡金属二卤族化合物中的光致发光。
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