Bhattacharyya Biswajit, Gahlot Kushagra, Viswanatha Ranjani, Pandey Anshu
Solid State and Structural Chemistry Unit, Indian Institute of Science , Bangalore-560012, India.
New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research , Jakkur, Bangalore-560064, India.
J Phys Chem Lett. 2018 Feb 1;9(3):635-640. doi: 10.1021/acs.jpclett.7b03087. Epub 2018 Jan 22.
We study the optical properties of copper containing II-VI alloy quantum dots (CuZnCdSe). Copper mole fractions within the host are varied from 0.001 to 0.35. No impurity phases are observed over this composition range, and the formation of secondary phases of copper selenide are observed only at x > 0.45. The optical absorption and emission spectra of these materials are observed to be a strong function of x, and provide information regarding composition induced impurity-impurity interactions. In particular, the integrated cross section of optical absorption per copper atom changes sharply (from 1 × 10 nm to 4 × 10 nm) at x = 0.12, suggesting a composition induced change in local electronic structure. These materials may serve as model systems to understand the electronic structure of I-III-VI semiconductor compounds.
我们研究了含铜的II-VI族合金量子点（CuZnCdSe）的光学性质。主体内的铜摩尔分数在0.001至0.35之间变化。在此组成范围内未观察到杂质相，仅在x > 0.45时观察到硒化铜第二相的形成。这些材料的光吸收和发射光谱被观察到是x的强函数，并提供了有关成分诱导的杂质-杂质相互作用的信息。特别是，每个铜原子的光吸收积分截面在x = 0.12时急剧变化（从1×10 纳米变为4×10 纳米），表明局部电子结构发生了成分诱导变化。这些材料可作为理解I-III-VI族半导体化合物电子结构的模型系统。
