Schumann Timo, Galletti Luca, Kealhofer David A, Kim Honggyu, Goyal Manik, Stemmer Susanne
Materials Department, University of California, Santa Barbara, California 93106-5050, USA.
Department of Physics, University of California, Santa Barbara, California 93106-9530, USA.
Phys Rev Lett. 2018 Jan 5;120(1):016801. doi: 10.1103/PhysRevLett.120.016801.
The magnetotransport properties of epitaxial films of Cd_{3}As_{2}, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.
对典型的三维狄拉克半金属Cd₃As₂外延薄膜的磁输运性质进行了研究。我们表明,在足够薄的薄膜的体电子态中会打开一个能隙,并且在低温下,表面态中的载流子主导电输运。这些态中的载流子具有足够的迁移率,从而产生量子化霍尔效应。这种尖锐的量子化表明表面输运几乎没有寄生体传导,为这类拓扑材料中的新型量子输运研究铺平了道路。我们的结果还表明,异质结构方法可用于研究和设计拓扑半金属中的量子态。