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双层过渡金属二卤族化合物中的范德瓦尔斯耦合应变调制。

Strain Modulation by van der Waals Coupling in Bilayer Transition Metal Dichalcogenide.

机构信息

Department of Chemistry and Centre for Advanced 2D Materials, National University of Singapore , 3 Science Drive 3, Singapore 117543.

NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive, Singapore 117456.

出版信息

ACS Nano. 2018 Feb 27;12(2):1940-1948. doi: 10.1021/acsnano.7b09029. Epub 2018 Feb 5.

Abstract

Manipulation of lattice strain is emerging as a powerful means to modify the properties of low-dimensional materials. Most approaches rely on external forces to induce strain, and the role of interlayer van der Waals (vdW) coupling in generating strain profiles in homobilayer transition metal dichalcogenide (TMDC) films is rarely considered. Here, by applying atomic-resolution electron microscopy and density functional theory calculations, we observed that a mirror twin boundary (MTB) modifies the interlayer vdW coupling in bilayer TMDC films, leading to the development of local strain for a few nanometers in the vicinity of the MTB. Interestingly, when a single MTB in one layer is "paired" with another MTB in an adjacent layer, interlayer-induced strain is reduced when the MTBs approach each other. Therefore, MTBs are not just 1D discontinuities; they can exert localized 2D strain on the adjacent lattices.

摘要

晶格应变的调控正成为一种改变低维材料性能的有效手段。大多数方法依赖于外部力来诱导应变,而在同层过渡金属二卤化物 (TMDC) 薄膜中产生应变分布的层间范德华 (vdW) 耦合的作用却很少被考虑。在这里,通过原子分辨电子显微镜和密度泛函理论计算,我们观察到一个镜面对称孪晶界 (MTB) 改变了双层 TMDC 薄膜的层间 vdW 耦合,导致在 MTB 附近几个纳米范围内产生局部应变。有趣的是,当一层中的单个 MTB 与相邻层中的另一个 MTB“配对”时,当 MTB 相互靠近时,层间诱导应变会减小。因此,MTB 不仅仅是一维不连续的结构,它们还可以在相邻晶格上施加局部二维应变。

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