Raj Shipra, Kumar Sharad, Srivastava Suneel Kumar, Kar Pradip, Roy Poulomi
Department of Chemistry, Birla Institute of Technology, Mesra, Ranchi 835215, Jharkand, India.
Department of Chemistry, Indian Institute of Technology, Kharagpur 721302, West Bengal, India.
J Nanosci Nanotechnol. 2018 Apr 1;18(4):2569-2575. doi: 10.1166/jnn.2018.14301.
Tin oxide thin films were uniformly deposited by successive ionic layer adsorption reaction (SILAR) method on glass substrates using ethylene diamine as a complexing agent. The proper annealing treatment in air converts as-deposited amorphous films into crystalline and removes defects, reducing strain in the crystal lattice. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR) spectroscopy. The film shows good optical transparency in the range of 200-1000 nm wavelength and electrical resistivity decreases upon annealing.
以乙二胺为络合剂,采用连续离子层吸附反应(SILAR)法在玻璃基板上均匀沉积氧化锡薄膜。在空气中进行适当的退火处理可将沉积态的非晶薄膜转变为晶体并消除缺陷,从而降低晶格中的应变。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、傅里叶变换红外(FTIR)光谱对薄膜进行表征。该薄膜在200 - 1000 nm波长范围内具有良好的光学透明度,并且退火后电阻率降低。