Kim Min-Woo, Kim Ja-Yeon, Cho Yoo-Hyun, Park Hyun-Sun, Kwon Min-Ki
Department of Photonic Engineering, Chosun University, Gwang Ju 501-759, Korea (South).
Micro LED Team, Korea Photonics Technology Institute (KOPTI), Gwang Ju 500-779, Korea (South).
J Nanosci Nanotechnol. 2018 Mar 1;18(3):2140-2143. doi: 10.1166/jnn.2018.14982.
In this paper, we discuss the effect of synthesis temperature on the lateral growth of MoS2 thin films in chemical vapor deposition. With increasing temperature, surface coverage with MoS2 triangular islands is significantly improved due to an increase in the density of nuclei and fully continuous MoS2 thin film is grown when the growth temperature reached 800 °C. The MoS2 triangular islands grown at the temperature from 650 to 750 °C are monolayer and highly crystalline, whereas the large-area continuous film grown at the temperature of 800 °C is composed of double-layer or overlapping MoS2 nanosheets. Our research provides that synthesis temperature is the key to growth large area and high quality single crystal MoS2 films.
在本文中，我们讨论了化学气相沉积中合成温度对MoS2薄膜横向生长的影响。随着温度升高，由于核密度增加，MoS2三角形岛的表面覆盖率显著提高，当生长温度达到800°C时，生长出完全连续的MoS2薄膜。在650至750°C温度下生长的MoS2三角形岛为单层且高度结晶，而在800°C温度下生长的大面积连续薄膜由双层或重叠的MoS2纳米片组成。我们的研究表明，合成温度是生长大面积高质量单晶MoS2薄膜的关键。
