Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
College of Physics and Electronic Information, Gannan Normal University , Ganzhou, Jiangxi 341000, China.
J Am Chem Soc. 2015 Dec 23;137(50):15632-5. doi: 10.1021/jacs.5b10519. Epub 2015 Dec 9.
Monolayer molybdenum disulfide (MoS2) has attracted great interest due to its potential applications in electronics and optoelectronics. Ideally, single-crystal growth over a large area is necessary to preserve its intrinsic figure of merit but is very challenging to achieve. Here, we report an oxygen-assisted chemical vapor deposition method for growth of single-crystal monolayer MoS2. We found that the growth of MoS2 domains can be greatly improved by introducing a small amount of oxygen into the growth environment. Triangular monolayer MoS2 domains can be achieved with sizes up to ∼350 μm and a room-temperature mobility up to ∼90 cm(2)/(V·s) on SiO2. The role of oxygen is not only to effectively prevent the poisoning of precursors but also to eliminate defects during the growth. Our work provides an advanced method for high-quality single-crystal monolayer MoS2 growth.
单层二硫化钼 (MoS2) 由于在电子学和光电子学方面的潜在应用而引起了极大的关注。理想情况下，需要在大面积上进行单晶生长以保持其固有品质因数，但这是非常具有挑战性的。在这里，我们报告了一种用于生长单晶单层 MoS2 的氧辅助化学气相沉积方法。我们发现，通过在生长环境中引入少量氧气，可以大大提高 MoS2 畴的生长。在 SiO2 上，可以实现尺寸高达约 350 μm 的三角形单层 MoS2 畴，并且在室温下的迁移率高达约 90 cm2/（V·s）。氧气的作用不仅是有效防止前体中毒，而且在生长过程中消除缺陷。我们的工作为高质量单晶单层 MoS2 的生长提供了一种先进的方法。
