Sun Wei, Tan Chee-Keong, Wierer Jonathan J, Tansu Nelson
Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, 18015, USA.
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, NY, 13699, USA.
Sci Rep. 2018 Feb 15;8(1):3109. doi: 10.1038/s41598-018-21434-6.
A novel III-Nitride digital alloy (DA) with ultra-broadband optical gain is proposed. Numerical analysis shows a 50-period InN/GaN DA yields minibands that are densely quantized by numerous confined states. Interband transitions between the conduction and valence minibands create ultra-broadband optical gain spectra with bandwidths up to ~1 μm that can be tuned from the red to infrared. In addition, the ultra-broadband optical gain, bandwidth, and spectral coverage of the III-Nitride DA is very sensitive to layer thickness and other structural design parameters. This study shows the promising potential of the III-Nitride DAs with tunable ultra-broadband interband optical gain for use in semiconductor optical amplifiers and future III-Nitride photonic integration applications.
提出了一种具有超宽带光学增益的新型III族氮化物数字合金（DA）。数值分析表明，一个50周期的InN/GaN DA产生的微带被大量受限态密集量子化。导带和价带微带之间的带间跃迁产生了带宽高达约1μm的超宽带光学增益光谱，其可从红色调至红外。此外，III族氮化物DA的超宽带光学增益、带宽和光谱覆盖对层厚度和其他结构设计参数非常敏感。本研究表明，具有可调谐超宽带带间光学增益的III族氮化物DA在半导体光放大器和未来III族氮化物光子集成应用中具有广阔的潜在应用前景。
