迈向氮化铟激光器：从平面单晶氮化铟结构中获得红外受激发射。

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures.

作者信息

Andreev B A, Kudryavtsev K E, Yablonskiy A N, Lobanov D N, Bushuykin P A, Krasilnikova L V, Skorokhodov E V, Yunin P A, Novikov A V, Davydov V Yu, Krasilnik Z F

机构信息

Institute for Physics of Microstructures of RAS, 603950, Nizhny Novgorod, Russia.

Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia.

出版信息

Sci Rep. 2018 Jun 21;8(1):9454. doi: 10.1038/s41598-018-27911-2.

DOI:10.1038/s41598-018-27911-2

PMID:29930345

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6013448/

Abstract

The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·10 cm to 3·10 cm. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.

摘要

报道了在光泵浦下对单晶n-InN层带间跃迁受激发射的观测。受激发射的光谱位置在1.64至1.9μm范围内变化，InN层中的自由电子浓度从2·10¹⁸cm⁻³变化到3·10¹⁹cm⁻³。确定了从外延InN层实现受激发射的主要必要条件。在质量最佳的样品中，在T = 8 K时获得的阈值激发功率密度低至400 W/cm²，并且在高达215 K时都能观测到受激发射。通过这种方式，证明了基于InN的激光器的可行性以及晶体氮化铟作为一种有前景的光子材料的潜力。