Li Lei, Wen Dianzhong
Key Laboratories of Senior-Education for Electronic Engineering, Harbin 150080, China.
Nanomaterials (Basel). 2018 Feb 17;8(2):114. doi: 10.3390/nano8020114.
The incorporation of the one-dimensional carbon nanomaterial carbon nanotubes (CNTs) in poly(methyl methacrylate) (PMMA) was found to successfully develop a resistive switching. It implements memristic characteristics which shift from bistable to tristable memory. The localized current pathways in the organic nanocomposite layers for each intermediate resistive state (IRS) are attributed to the trapping mechanism consistent with the fluorescent measurements. Multi-bit organic memories have attracted considerable interest, which provide an effective way to increase the memory density per unit cell area. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.
研究发现，将一维碳纳米材料碳纳米管（CNTs）掺入聚甲基丙烯酸甲酯（PMMA）中能够成功实现电阻开关。它展现出忆阻特性，从双稳态转变为三稳态存储。有机纳米复合材料层中每个中间电阻状态（IRS）的局部电流路径归因于与荧光测量结果一致的俘获机制。多位有机存储器引起了广泛关注，它为提高单位单元面积的存储密度提供了有效途径。本研究将有助于多位可存储有机纳米复合材料存储器件系统的开发与调控。
