Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , South Korea.
Department of Organic Material Science and Engineering , Pusan National University , Busan 46241 , South Korea.
ACS Appl Mater Interfaces. 2018 Aug 1;10(30):25614-25620. doi: 10.1021/acsami.8b08803. Epub 2018 Jul 20.
Inverted near-infrared (NIR) organic photodetectors (OPDs) are required to combine the OPDs with an n-channel silicon-based integrated circuit. NIR absorption in the 930-960 nm range is important because the intensity of solar irradiation is low in this wavelength regime. Here, we controlled the crystallinity of lead(II) phthalocyanine (PbPc) in a PbPc:C blend film to obtain NIR absorption. To form a triclinic phase responsible for NIR light absorption, a substrate was heated during fabrication and C was used as a templating layer, as well as an electron extraction layer, for an inverted structure. NIR absorption near 950 nm was enhanced, and the structural properties of the film changed dramatically. The OPD with enhanced NIR absorption exhibited a responsivity of 244 mA/W and an external quantum efficiency of 31.1% at a reverse bias of -3 V and 970 nm. The OPD detectivity also increased to 9.01 × 10 and 1.36 × 10 cm Hz/W under a zero bias and a reverse bias of -3 V, respectively.
倒置近红外(NIR)有机光电探测器(OPD)需要与 n 沟道硅基集成电路结合使用。在 930-960nm 范围内的近红外吸收很重要,因为在这个波长范围内太阳辐照度较低。在这里,我们控制 PbPc:C 共混膜中 PbPc 的结晶度以获得近红外吸收。为了形成负责近红外光吸收的三斜相,在制造过程中加热基底,并将 C 用作模板层以及倒置结构的电子提取层。在 950nm 附近的近红外吸收得到增强,并且膜的结构性质发生了巨大变化。具有增强的近红外吸收的 OPD 在反向偏压为-3V 和 970nm 时表现出 244mA/W 的响应度和 31.1%的外量子效率。在零偏压和-3V 反向偏压下,OPD 的探测率分别增加到 9.01×10 和 1.36×10 cm Hz/W。