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直接映射 NdNiO 金属-绝缘相变中的相分离。

Direct Mapping of Phase Separation across the Metal-Insulator Transition of NdNiO.

机构信息

Unité Mixte de Physique, CNRS, Thales , Université Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France.

ICMAB-CSIC Campus de la UAB , 08193 Bellaterra, Barcelona , Spain.

出版信息

Nano Lett. 2018 Apr 11;18(4):2226-2232. doi: 10.1021/acs.nanolett.7b04728. Epub 2018 Mar 28.

Abstract

Perovskite rare-earth nickelates RNiO are prototype correlated oxides displaying a metal-insulator transition (MIT) at a temperature tunable by the ionic radius of the rare-earth R. Although its precise origin remains a debated topic, the MIT can be exploited in various types of applications, notably for resistive switching and neuromorphic computation. So far, the MIT has been mostly studied by macroscopic techniques, and insights into its nanoscale mechanisms were only provided recently by X-ray photoemission electron microscopy through absorption line shifts, used as an indirect proxy to the resistive state. Here, we directly image the local resistance of NdNiO thin films across their first-order MIT using conductive-atomic force microscopy. Our resistance maps reveal the nucleation of ∼100-300 nm metallic domains in the insulating state that grow and percolate as temperature increases. We discuss the resistance contrast mechanism, analyze the microscopy and transport data within a percolation model, and propose experiments to harness this mesoscopic electronic texture in devices.

摘要

钙钛矿型稀土镍酸盐 RNiO 是一类典型的关联氧化物,其金属-绝缘体转变(MIT)温度可通过稀土 R 的离子半径进行调控。尽管其确切的起源仍存在争议,但 MIT 可应用于多种类型的应用中,特别是用于电阻开关和神经形态计算。到目前为止,MIT 主要通过宏观技术进行研究,而最近通过 X 射线光电子能谱显微镜通过吸收线位移提供了对其纳米级机制的见解,该方法被用作电阻状态的间接替代物。在这里,我们使用导电原子力显微镜直接在 NdNiO 薄膜的一级 MIT 中对其局部电阻进行成像。我们的电阻图揭示了在绝缘状态下约 100-300nm 金属域的成核,随着温度的升高,这些金属域会生长并连通。我们讨论了电阻对比度机制,在渗流模型内分析了显微镜和输运数据,并提出了在器件中利用这种介观电子织构的实验方案。

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