Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil , Jung-gu, Seoul 100-715 , Republic of Korea.
Department of Chemistry , Gyeongsang National University and RIGET , 900, Gajwa-dong , Jinju , Gyeongnam 660-701 , Republic of Korea.
ACS Appl Mater Interfaces. 2018 Apr 25;10(16):13774-13782. doi: 10.1021/acsami.8b03131. Epub 2018 Apr 10.
We report the synthesis of a new conjugated polymer composed of isoindigo (IID) and 2,3-bis[thiophenyl-2-yl]thiophene acrylonitrile (CNTVT) subunits for high-performance n-type organic field-effect transistors (OFETs). To realize high electron mobility for the IID-based conjugated polymer, an electron-withdrawing nitrile group is incorporated into the vinylene unit, thereby shifting the energy of the lowest unoccupied molecular orbital for efficient electron injection from Au electrodes without disrupting the backbone planarity. Uniaxially aligned IID-CNTVT-conjugated polymer films for efficient intramolecular charge transport are achieved by off-center spin-coating from preaggregated solutions. To obtain its stable preaggregation in solution, a binary solvent system (a mixture of good and bad solvents) chosen with the assistance of Hansen solubility parameter simulation is used. Through this process, highly aligned IID-CNTVT films are obtained by off-center spin coating from a solvent mixture of 9:1 dichlorobenzene/2-methoxyethanol as the good and bad solvents, respectively. The properties of the aligned IID-CNTVT films are characterized with various analytical techniques, including UV-visible absorption spectroscopy, angle-resolved near-edge X-ray absorption fine structure spectroscopy, and grazing-incidence wide-angle X-ray scattering. Top-gate/bottom-contact OFETs with IID-CNTVT films aligned in the direction of charge transport exhibit a high-electron field-effect mobility of 0.83 ± 0.13 cm/V·s.
我们报告了一种由异吲哚(IID)和 2,3-双[噻吩-2-基]噻吩丙烯腈(CNTVT)单元组成的新型共轭聚合物的合成,用于高性能 n 型有机场效应晶体管(OFET)。为了实现基于 IID 的共轭聚合物的高电子迁移率,在亚乙烯基单元中引入了吸电子腈基,从而在不破坏主链平面性的情况下,将最低未占据分子轨道的能量转移到 Au 电极上,从而实现有效的电子注入。通过预聚集溶液的非中心旋转涂布,可以实现各向异性对齐的 IID-CNTVT 共轭聚合物薄膜,以实现有效的分子内电荷输运。为了在溶液中获得其稳定的预聚集,选择了具有 Hansen 溶解度参数模拟辅助的二元溶剂体系(良溶剂和不良溶剂的混合物)。通过该过程,可以通过将二氯苯/2-甲氧基乙醇的 9:1 混合物作为良溶剂和不良溶剂从非中心旋转涂布中获得高度对齐的 IID-CNTVT 薄膜。使用各种分析技术对取向 IID-CNTVT 薄膜的特性进行了表征,包括紫外-可见吸收光谱、角分辨近边缘 X 射线吸收精细结构光谱和掠入射广角 X 射线散射。具有沿电荷传输方向取向的 IID-CNTVT 薄膜的顶栅/底接触 OFET 表现出 0.83±0.13cm/V·s 的高电子场效应迁移率。