Beijing National Laboratory for Molecular Sciences, The Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China.
Acc Chem Res. 2014 Apr 15;47(4):1117-26. doi: 10.1021/ar400254j. Epub 2014 Feb 6.
Conjugated polymers have developed rapidly due to their promising applications in low-cost, lightweight, and flexible electronics. The development of the third-generation donor-acceptor (D-A) polymers greatly improved the device performance in organic solar cells (OSCs) and field-effect transistors (FETs). However, for further improvement of device performance, scientists need to develop new building blocks, in particular electron-deficient aromatics, and gain an in-depth understanding of the structure-property relationships. Recently, isoindigo has been used as a new acceptor of D-A conjugated polymers. An isomer of indigo, isoindigo is a less well-known dye and can be isolated as a by-product from certain biological processes. It has two lactam rings and exhibits strong electron-withdrawing character. This electron deficiency gives isoindigo-based polymers intriguing properties, such as broad absorption and high open circuit voltage in OSCs, as well as high mobility and good ambient stability in FETs. In this Account, we review our recent progress on the design, synthesis, and structure-property relationship study of isoindigo-based polymers for FETs. Starting with some discussion on carrier transport in polymer films, we provide some basic strategies towards high-performance polymer FETs. We discuss the stability issue of devices, the impediment of the alkyl side chains, and the choice of the donor part of conjugated polymers. We demonstrate that introducing the isoindigo core effectively lowers the HOMO levels of polymers and provides FETs with long-time stability. In addition, we have found that when we use inappropriate alkyl side chains or non-centrosymmetric donors, the device performance of isoindigo polymers suffers. To further improve device performance and ambient stability, we propose several design strategies, such as using farther branched alkyl chains, modulating polymer energy levels, and extending π-conjugated backbones. We have found that using farther branched alkyl chains can effectively decrease interchain π-π stacking distance and improve carrier mobility. When we introduce electron-deficient functional groups on the isoindigo core, the LUMO levels of the polymers markedly decrease, which significantly improves the electron mobility and device stability. In addition, we present a new polymer system called BDOPV, which is based on the concept of π-extended isoindigo. By application of some strategies successfully used in isoindigo-based polymers, BDOPV-based polymers exhibit high mobility and good stability both in n-type and in ambipolar FETs. We believe that a synergy of molecular engineering strategies towards the isoindigo core, donor units, and side chains may further improve the performance and broaden the application of isoindigo-based polymers.
由于在低成本、轻量级和灵活的电子产品中有很有前景的应用,共轭聚合物发展迅速。第三代给体-受体(D-A)聚合物的发展极大地提高了有机太阳能电池(OSC)和场效应晶体管(FET)中的器件性能。然而,为了进一步提高器件性能,科学家们需要开发新的构建块,特别是缺电子芳烃,并深入了解结构-性能关系。最近,吲哚二酮已被用作 D-A 共轭聚合物的新型受体。吲哚的异构体,吲哚二酮是一种不太知名的染料,可作为某些生物过程的副产物被分离出来。它有两个内酰胺环,表现出很强的吸电子特性。这种电子缺失使基于吲哚二酮的聚合物具有有趣的性质,例如在 OSC 中具有宽吸收和高开路电压,以及在 FET 中具有高迁移率和良好的环境稳定性。在本综述中,我们回顾了我们在基于吲哚二酮的聚合物的设计、合成和结构-性能关系研究方面的最新进展,用于 FET。首先讨论了聚合物薄膜中的载流子输运问题,然后提供了一些实现高性能聚合物 FET 的基本策略。我们讨论了器件的稳定性问题、烷基侧链的阻碍以及共轭聚合物给体部分的选择。我们证明,引入吲哚二酮核心可有效降低聚合物的 HOMO 能级,并为 FET 提供长时间的稳定性。此外,我们发现当我们使用不合适的烷基侧链或非中心对称给体时,吲哚二酮聚合物的器件性能会受到影响。为了进一步提高器件性能和环境稳定性,我们提出了几种设计策略,例如使用更远的支化烷基链、调节聚合物能级和扩展π共轭骨架。我们发现,使用更远的支化烷基链可以有效地减小链间π-π堆积距离并提高载流子迁移率。当我们在吲哚二酮核心上引入缺电子官能团时,聚合物的 LUMO 能级显著降低,这显著提高了电子迁移率和器件稳定性。此外,我们提出了一种称为 BDOPV 的新聚合物体系,它基于扩展π的吲哚二酮的概念。通过成功应用于基于吲哚二酮的聚合物中的一些策略,BDOPV 聚合物在 n 型和双极性 FET 中均表现出高迁移率和良好的稳定性。我们相信,对吲哚二酮核心、给体单元和侧链的分子工程策略的协同作用可能会进一步提高基于吲哚二酮的聚合物的性能并拓宽其应用。