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通过直接激光写入增强基于掩膜的光刻技术,以提高分辨率和速度。

Augmenting mask-based lithography with direct laser writing to increase resolution and speed.

作者信息

Lim Miles P, Guo Xiaofei, Grunblatt Eva L, Clifton Garrett M, Gonzalez Ayda N, LaFratta Christopher N

出版信息

Opt Express. 2018 Mar 19;26(6):7085-7090. doi: 10.1364/OE.26.007085.

Abstract

A new method of hybrid photolithography, Laser Augmented Microlithographic Patterning (LAMP), is described in which direct laser writing is used to define additional features to those made with an inexpensive transparency mask. LAMP was demonstrated with both positive- and negative-tone photoresists, S1813 and SU-8, respectively. The laser written features, which can have sub-micron linewidths, can be registered to within 2.2 µm of the mask created features. Two example structures, an interdigitated electrode and a microfluidic device that can capture an array of dozens of silica beads or living cells, are described. This combination of direct laser writing and conventional UV lithography compensates for the drawbacks of each method, and enables high resolution prototypes to be created, tested, and modified quickly.

摘要

本文描述了一种混合光刻的新方法——激光增强微光刻图案化(LAMP),该方法使用直接激光写入来定义除通过廉价透明掩膜制作的特征之外的其他特征。分别使用正性光刻胶S1813和负性光刻胶SU-8对LAMP进行了演示。激光写入的特征可以具有亚微米级的线宽,并且可以与掩膜制作的特征精确对准在2.2微米以内。文中描述了两个示例结构,一个叉指电极和一个能够捕获数十个二氧化硅微珠或活细胞阵列的微流控装置。直接激光写入和传统紫外光刻的这种结合弥补了每种方法的缺点,并能够快速创建、测试和修改高分辨率原型。

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