State Key Laboratory of Superhard Materials , Jilin University , Changchun 130012 , People's Republic of China.
ACS Appl Mater Interfaces. 2018 Apr 18;10(15):12947-12953. doi: 10.1021/acsami.7b17932. Epub 2018 Apr 9.
In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.
在这项工作中，通过一种新的简便高效的方法合成了具有室温铁磁性的氧掺杂氮化硼纳米粒子。通过 X 射线光电子能谱分析，纳米粒子中没有金属磁性杂质。氮化硼纳米粒子呈抛物线形状，随着反应时间的增加而增加。当反应时间为 12 小时时，在 300 K 下达到最大饱和磁化强度值 0.2975 emu g，表明居里温度（T）高于 300 K。结合第一性原理计算，导带中 B 2p 轨道、N 2p 轨道和 O 2p 轨道之间的耦合是室温铁磁性的主要起源，也证明了磁矩随氧掺杂含量的变化而变化。与其他室温铁磁半导体相比，由于具有高的抗氧化性和优异的化学稳定性，氮化硼纳米粒子在自旋电子器件中有广泛的潜在应用。
