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关联窄带隙半导体中的热电效应。

Thermoelectricity in correlated narrow-gap semiconductors.

作者信息

Tomczak Jan M

机构信息

Institute of Solid State Physics, TU Wien, A-1040 Vienna, Austria.

出版信息

J Phys Condens Matter. 2018 May 10;30(18):183001. doi: 10.1088/1361-648X/aab284. Epub 2018 Apr 10.

DOI:10.1088/1361-648X/aab284
PMID:29633717
Abstract

We review many-body effects, their microscopic origin, as well as their impact on thermoelectricity in correlated narrow-gap semiconductors. Members of this class-such as FeSi and FeSb-display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie-Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators-such as CeBiPt for which we present new results-and propose a general classification of paramagnetic insulators. From the latter, FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we explore new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

摘要

我们回顾了多体效应、其微观起源以及它们对关联窄带隙半导体热电性能的影响。这类材料中的成员,如FeSi和FeSb,在各种可观测量中表现出不寻常的温度依赖性:在低温下具有大热电势的绝缘体,在远低于其能隙大小的温度下转变为不良金属。这种绝缘体到金属的转变伴随着光导率中在大能量范围内的光谱权重转移,以及磁化率从激活行为到类居里 - 外斯行为的逐渐转变。我们回顾了对这些现象的理解,讨论了与重费米子近藤绝缘体的关系,例如我们展示了新结果的CeBiPt,并提出了顺磁绝缘体的一般分类。从后者来看,FeSi表现为轨道选择性近藤绝缘体。聚焦于硅化物、锑化物、方钴矿和赫斯勒化合物等金属间化合物,我们展示了在存在电子关联的情况下对输运性质进行实际模拟的成功与挑战。此外,我们探索了电子关联可能有助于改善热电性能的新途径。

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