Chaves Ferney A, Jiménez David
Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, E-08193 Bellaterra, Spain.
Nanotechnology. 2018 Jul 6;29(27):275203. doi: 10.1088/1361-6528/aabeb2. Epub 2018 Apr 17.
The increasing technological control of two-dimensional (2D) materials has allowed the demonstration of 2D lateral junctions exhibiting unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic devices. Notably, the chemically doped MoS homojunction, the WSe-MoS monolayer and MoS monolayer/multilayer heterojunctions, have been demonstrated. Here we report the investigation of 2D lateral junction electrostatics, which differs from the bulk case because of the weaker screening, producing a much longer transition region between the space-charge region and the quasi-neutral region, making inappropriate the use of the complete-depletion region approximation. For such a purpose we have developed a method based on the conformal mapping technique to solve the 2D electrostatics, widely applicable to every kind of junctions, giving accurate results for even large asymmetric charge distribution scenarios.
对二维（2D）材料日益增强的技术控制，使得二维横向结得以展示出具有独特性质的特性，这些特性可能成为新一代二维电子和光电器件的基础。值得注意的是，已经证明了化学掺杂的MoS同质结、WSe-MoS单层以及MoS单层/多层异质结。在此，我们报告对二维横向结静电学的研究，由于屏蔽较弱，其与体材料情况不同，在空间电荷区和准中性区之间产生了长得多的过渡区，使得完全耗尽区近似不再适用。为此，我们开发了一种基于共形映射技术的方法来求解二维静电学问题，该方法广泛适用于各种结，即使在电荷分布高度不对称的情况下也能给出准确结果。
