Vaknin Yonatan, Dagan Ronen, Rosenwaks Yossi
School of Electrical Engineering, Tel-Aviv University, Tel-Aviv 69978, Israel.
Nanomaterials (Basel). 2019 Jun 14;9(6):882. doi: 10.3390/nano9060882.
The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS FET and a few-layer MoS FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.
包括过渡金属二硫属化物（TMD）在内的层状材料的发现催生了各种新型纳米电子器件，包括快速开关场效应晶体管（FET）、组装异质结构、柔性电子产品等。二硫化钼（MoS）作为一种过渡金属二硫属化物半导体，因其出色的化学和热稳定性而被认为是后硅时代的理想候选材料。我们展示了一项关于MoS FET器件的开尔文探针力显微镜（KPFM）研究，通过原位监测沿晶体管导电沟道的静电势分布，给出了沟道中夹断形成的直接证据。此外，我们还对单层MoS FET和几层MoS FET在这类器件中的栅极效应、电场分布、耗尽区和夹断形成进行了系统比较。
