Mattinen Miika, King Peter J, Khriachtchev Leonid, Meinander Kristoffer, Gibbon James T, Dhanak Vin R, Räisänen Jyrki, Ritala Mikko, Leskelä Markku
Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014, Finland.
Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 43, FI-00014, Finland.
Small. 2018 May;14(21):e1800547. doi: 10.1002/smll.201800547. Epub 2018 Apr 19.
Semiconducting 2D materials, such as SnS , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS films has remained a great challenge. Herein, continuous wafer-scale 2D SnS films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.
半导体二维材料，如硫化锡（SnS），在从电子学到催化等众多应用领域具有巨大潜力。然而， few层SnS薄膜的沉积仍然是一个巨大的挑战。在此，通过将一种新的原子层沉积工艺与低温（250°C）沉积后退火相结合，实现了具有精确控制厚度（2至10个单层）的连续晶圆级二维SnS薄膜。由于原子层沉积独特的自限生长机制，证明了大面积和三维衬底的均匀涂层。详细表征证实了SnS薄膜的1T型晶体结构、组成、光滑度和连续性。还引入了两阶段沉积工艺来改善薄膜的织构。在低温下成功沉积连续、高质量的SnS薄膜是二维半导体各种应用迈出的关键一步。
