Lee Namgue, Choi Hyeongsu, Park Hyunwoo, Choi Yeonsik, Yuk Hyunwoo, Lee JungHoon, Lee Sung Gwon, Lee Eun Jong, Jeon Hyeongtag
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Korea.
Nanotechnology. 2020 Aug 28;31(35):355702. doi: 10.1088/1361-6528/ab92cc. Epub 2020 May 13.
Tin disulfide (SnS) has emerged as a promising two-dimensional (2D) material due to its excellent electrical and optical properties. However, research into 2D SnS has mainly focused on its synthesis procedures and applications; its stability to humidity and temperature has yet to be studied. In this work, 2D SnS thin films were grown by atomic layer deposition (ALD) and characterized by various tools, such as x-ray diffraction, Raman analysis, and transmission electron spectroscopy. Characterization reveals that ALD-grown SnS thin films are a high-quality 2D material. After characterization, a four-inch-wafer-scale uniformity test was performed by Raman analysis. Owing to the quality, large-area growth enabled by the ALD process, 98.72% uniformity was obtained. Finally, we calculated the thermodynamic equations for possible reactions between SnS and HO to theoretically presurmise the oxidation of SnS during accelerated humidity and temperature testing. After the accelerated humidity and temperature test, x-ray diffraction, Raman analysis, and Auger electron spectroscopy were performed to check whether SnS was oxidized or not. Our data revealed that 2D SnS thin films were stable at humid conditions.
二硫化锡（SnS）因其优异的电学和光学性能，已成为一种很有前景的二维（2D）材料。然而，对二维SnS的研究主要集中在其合成工艺和应用方面；其对湿度和温度的稳定性尚未得到研究。在这项工作中，通过原子层沉积（ALD）生长了二维SnS薄膜，并用各种工具进行了表征，如X射线衍射、拉曼分析和透射电子能谱。表征结果表明，通过ALD生长的SnS薄膜是一种高质量的二维材料。表征之后，通过拉曼分析进行了四英寸晶圆级的均匀性测试。由于ALD工艺能够实现高质量的大面积生长，因此获得了98.72%的均匀性。最后，我们计算了SnS与HO之间可能发生反应的热力学方程，以便从理论上推测在加速湿度和温度测试过程中SnS的氧化情况。在加速湿度和温度测试之后，进行了X射线衍射、拉曼分析和俄歇电子能谱，以检查SnS是否被氧化。我们的数据表明，二维SnS薄膜在潮湿条件下是稳定的。
