Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 02792, Korea.
Nanoscale. 2018 Sep 27;10(37):17712-17721. doi: 10.1039/c8nr05450a.
Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate the transition of 2D metal dichalcogenides from the research stage to the practical industrial application stage. However, an industrially relevant method, i.e., the low-temperature synthesis of wafer-scale, continuous, and orientation-controlled 2D metal dichalcogenides, still remains a significant challenge. Here, we report the low-temperature (≤350 °C) synthesis of uniform and continuous n-type SnS2 thin films via the combination of atomic layer deposition (ALD) of tin oxides and subsequent sulfurization. Well-crystallized and aligned SnS2 layers parallel to the substrate are demonstrated through the phase engineering of the ALD-grown tin oxide and the substrate surface. The additional H2S plasma treatment at 300 °C leads to the formation of stoichiometric SnS2. The formation of conformal SnS2 layers over a three-dimensional undulating hole structure is confirmed, which reveals the potential for applications beyond the planar structured architecture. The present results could be a step toward the realization of 2D metal dichalcogenides in industry.
二维（2D）金属二卤族化合物由于其在块状材料中不存在的独特特性，其研究正在迅速扩展。这些新兴材料的工业兼容开发对于促进 2D 金属二卤族化合物从研究阶段向实际工业应用阶段的转变是必不可少的。然而，低温合成晶圆级、连续且具有取向控制的 2D 金属二卤族化合物仍然是一个重大挑战。在这里，我们通过原子层沉积（ALD）氧化锡和随后的硫化反应，报告了在低温（≤350°C）下合成均匀和连续的 n 型 SnS2 薄膜。通过 ALD 生长的氧化锡和衬底表面的相工程，证明了与衬底平行的结晶良好且对齐的 SnS2 层。在 300°C 下进行额外的 H2S 等离子体处理会导致生成化学计量比的 SnS2。在三维起伏孔结构上形成了保形 SnS2 层，这表明其在超越平面结构架构的应用方面具有潜力。本研究结果可能是实现 2D 金属二卤族化合物工业化的一步。
