用于紫外发光二极管的FTO/Ag/FTO结构宽带隙透明导电电极

Wide Bandgap Transparent Conducting Electrode of FTO/Ag/FTO Structure for Ultraviolet Light-Emitting Diodes.

作者信息

Yohn Gyu-Jae, Jeong Soae, Kang Soo-Hyun, Kim Si-Won, Noh Beom-Rae, Oh Semi, Jeong Bong-Yong, Kim Kyoung-Kook

机构信息

Department of Advanced Convergence Technology, and Research Institute of Advanced Convergence Technology, Korea Polytechnic University, Siheung, Gyeonggi-do 15073, Republic of Korea.

Department of Nano Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do 15073, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2018 Sep 1;18(9):5959-5964. doi: 10.1166/jnn.2018.15580.

DOI:10.1166/jnn.2018.15580

PMID:29677724

Abstract

We investigated the effect of the Ag interlayer thickness on the structural, electrical and optical properties of FTO/Ag/FTO structures designed for use in wide bandgap transparent conducting electrodes. The top and bottom FTO layers were deposited on α-Al2O3 (0001) substrates via RF magnetron sputtering at 300 °C and Ag interlayers were deposited using an e-beam evaporator system. We optimized the figure of merit by changing the thickness of the inserted Ag interlayer from 10 nm to 14 nm, achieving a maximum value of 2.46 × 10-3 Ω-1 and a resistivity of 6.4 × 10-4 Ω · cm using an FTO (70 nm)/Ag (14 nm)/FTO (40 nm) structure. Furthermore, the average optical transmittance in the deep UV range (300 to 330 nm) was 82.8%.

摘要

我们研究了银中间层厚度对设计用于宽带隙透明导电电极的FTO/Ag/FTO结构的结构、电学和光学性能的影响。顶部和底部的FTO层通过射频磁控溅射在300°C下沉积在α-Al2O3(0001)衬底上，银中间层使用电子束蒸发系统沉积。我们通过将插入的银中间层厚度从10纳米改变到14纳米来优化品质因数，使用FTO(70纳米)/Ag(14纳米)/FTO(40纳米)结构实现了2.46×10-3Ω-1的最大值和6.4×10-4Ω·cm的电阻率。此外，在深紫外范围(300至330纳米)的平均光学透过率为82.8%。