Lin Yu-Sheng, Chen Wenjun
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, China.
Sci Rep. 2018 May 8;8(1):7150. doi: 10.1038/s41598-018-25728-7.
The on-chip perfect meta-absorber (PMA) is an important optical and thermal energy component in photovoltaics, thermal emitters, and energy harvesting applications. However, most reported PMAs rely on the complicated lithography techniques, which imposed a serious cost barrier on the development of practical applications, especially in the visible to near-infrared (NIR) wavelength range and at very large scales. Importantly, it is hard to realize PMA in the UV wavelength range by using current lithography techniques. In this article, we develop an ultra-broadband PMA by using natural lithography (NL) technique. The morphology of proposed PMA is randomly distributed pod-like nanostructures composed of a nanocomposite (Au/SiO) covered a gold layer. It can be formed easily on Si substrate to function as an ultra-broadband, omnidirectional, and polarization-independent PMA by controlling the conditions of sputtering deposition and thermal annealing treatment. We experimentally realized an on-chip ultra-broadband PMA with almost 100% absorption spanned from UV-visible to NIR wavelength ranges. This cost-effective and high-efficiency approach would release the manufacturing barrier for previously reported PMAs and therefore open an avenue to the development of effectively energy harvesting, energy recycling, and heat liberation applications.
片上完美元吸收器（PMA）是光伏、热发射体及能量收集应用中一种重要的光和热能组件。然而，大多数已报道的PMA依赖复杂的光刻技术，这给实际应用的发展带来了严重的成本障碍，尤其是在可见光到近红外（NIR）波长范围以及大规模应用中。重要的是，利用当前光刻技术很难在紫外波长范围内实现PMA。在本文中，我们利用自然光刻（NL）技术开发了一种超宽带PMA。所提出的PMA的形态是由覆盖有金层的纳米复合材料（Au/SiO）组成的随机分布的豆荚状纳米结构。通过控制溅射沉积和热退火处理条件，它可以很容易地在硅衬底上形成，用作超宽带、全向且与偏振无关的PMA。我们通过实验实现了一种片上超宽带PMA，其在紫外-可见光到近红外波长范围内具有几乎100%的吸收率。这种具有成本效益且高效的方法将消除先前报道的PMA的制造障碍，从而为有效能量收集、能量回收和热释放应用的发展开辟一条道路。
