• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于等离子体增强热电子近红外光电探测的金纳米颗粒修饰硅金字塔

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection.

作者信息

Qi Zhiyang, Zhai Yusheng, Wen Long, Wang Qilong, Chen Qin, Iqbal Sami, Chen Guangdian, Xu Ji, Tu Yan

机构信息

Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.

出版信息

Nanotechnology. 2017 May 22;28(27):275202. doi: 10.1088/1361-6528/aa74a3.

DOI:10.1088/1361-6528/aa74a3
PMID:28531089
Abstract

The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10 A cm. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

摘要

金属与硅(Si)之间的异质结是将硅基光电二极管的响应扩展到近红外(NIR)区域的一种有吸引力的途径,即所谓的肖特基势垒二极管。吸收到金属纳米结构中的光子会激发表面等离子体共振(SPR),而SPR可以通过产生热电子以非辐射方式被衰减。不幸的是,由于光吸收低和电子注入效率差,热电子探测器的量子效率仍然很低。在本研究中,我们提出了一种基于金纳米颗粒(Au NP)修饰的硅金字塔肖特基结的高效低成本等离子体热电子近红外光电探测器。通过对薄金膜进行各向异性化学湿法蚀刻和快速热退火(RTA),实现了大面积且无需光刻的光电探测器。我们通过实验证明,这些热电子探测器在1200 - 1475 nm的近红外区域具有宽光响应光谱,暗电流低至10 A cm量级。观察到的响应度使这些器件能够与其他报道的使用完美周期性纳米结构的硅基近红外热电子光电探测器相竞争。性能的提升归因于金字塔表面能够增强光捕获和局部电场,以及纳米尺寸的金纳米颗粒有利于热电子的隧穿。简单的大面积制备工艺使其适用于大规模热光伏电池和低成本近红外检测应用。

相似文献

1
Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection.用于等离子体增强热电子近红外光电探测的金纳米颗粒修饰硅金字塔
Nanotechnology. 2017 May 22;28(27):275202. doi: 10.1088/1361-6528/aa74a3.
2
Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection.用于低成本宽带近红外光探测的硅基随机尺寸等离子体纳米天线
Sci Rep. 2014 Nov 19;4:7103. doi: 10.1038/srep07103.
3
Near-infrared detection based on the excitation of hot electrons in Au/Si microcone array.基于金/硅微锥阵列中热电子激发的近红外探测。
Nanotechnology. 2024 Jul 22;35(40). doi: 10.1088/1361-6528/ad61f1.
4
Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure.利用ITO/Au/Au纳米颗粒/n-Si薄膜结构展示基于硅的短波红外光探测
Sensors (Basel). 2022 Jun 16;22(12):4536. doi: 10.3390/s22124536.
5
Facilely Fabricated Zero-Bias Silicon-Based Plasmonic Photodetector in the Near-Infrared Region with a Schottky Barrier Properly Controlled by Nanoalloys.通过纳米合金适当控制肖特基势垒,在近红外区域轻松制备的零偏置硅基等离子体光探测器。
ACS Appl Mater Interfaces. 2024 Feb 21;16(7):8984-8992. doi: 10.1021/acsami.3c15328. Epub 2024 Feb 7.
6
Nanobowls-assisted broadband absorber for unbiased Si-based infrared photodetection.用于无偏压硅基红外光电探测的纳米碗辅助宽带吸收器。
Opt Express. 2021 May 10;29(10):15505-15516. doi: 10.1364/OE.423897.
7
Enhancing Hot-Electron Photodetection of a TiO/Au Schottky Junction by Employing a Hybrid Plasmonic Nanostructure.通过采用混合等离子体纳米结构增强TiO/Au肖特基结的热电子光电探测
Materials (Basel). 2022 Apr 8;15(8):2737. doi: 10.3390/ma15082737.
8
A Silicon Sub-Bandgap Near-Infrared Photodetector with High Detectivity Based on Textured Si/Au Nanoparticle Schottky Junctions Covered with Graphene Film.基于纹理化 Si/Au 纳米颗粒肖特基结覆盖石墨烯膜的硅亚带隙近红外高探测率光电探测器。
Sensors (Basel). 2023 Jul 6;23(13):6184. doi: 10.3390/s23136184.
9
Dual-plasmonic Au/graphene/Au-enhanced ultrafast, broadband, self-driven silicon Schottky photodetector.基于金/石墨烯/金双等离子体增强的超快、宽带、自驱动硅肖特基光电探测器。
Nanotechnology. 2018 Dec 14;29(50):505203. doi: 10.1088/1361-6528/aae360. Epub 2018 Sep 21.
10
Black silicon Schottky photodetector in sub-bandgap near-infrared regime.亚带隙近红外波段的黑色硅肖特基光电探测器。
Opt Express. 2019 Feb 4;27(3):3161-3168. doi: 10.1364/OE.27.003161.

引用本文的文献

1
Scalable hot carrier-assisted silicon photodetector array based on ultrathin gold film.基于超薄金膜的可扩展热载流子辅助硅光电探测器阵列
Nanophotonics. 2024 Jan 16;13(7):1049-1057. doi: 10.1515/nanoph-2023-0656. eCollection 2024 Mar.
2
Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface.克服纳米级金属与硅界面的费米能级钉扎效应。
Nanomaterials (Basel). 2023 Jul 28;13(15):2193. doi: 10.3390/nano13152193.
3
A Silicon Sub-Bandgap Near-Infrared Photodetector with High Detectivity Based on Textured Si/Au Nanoparticle Schottky Junctions Covered with Graphene Film.
基于纹理化 Si/Au 纳米颗粒肖特基结覆盖石墨烯膜的硅亚带隙近红外高探测率光电探测器。
Sensors (Basel). 2023 Jul 6;23(13):6184. doi: 10.3390/s23136184.
4
Deep learning-based inverse design of microstructured materials for optical optimization and thermal radiation control.基于深度学习的微结构材料光学优化和热辐射控制的反向设计。
Sci Rep. 2023 May 6;13(1):7382. doi: 10.1038/s41598-023-34332-3.
5
Ultra-thin Ag/Si heterojunction hot-carrier photovoltaic conversion Schottky devices for harvesting solar energy at wavelength above 1.1 µm.用于在 1.1 µm 以上波长范围内收集太阳能的超薄膜 Ag/Si 异质结热载流子光伏转换肖特基器件。
Sci Rep. 2023 Apr 3;13(1):5388. doi: 10.1038/s41598-023-31982-1.
6
Sub-bandgap near-infrared photovoltaic response in Au/AlO/n-Si metal-insulator-semiconductor structure by plasmon-enhanced internal photoemission.通过等离子体增强内光电发射在Au/AlO/n-Si金属-绝缘体-半导体结构中的亚带隙近红外光伏响应。
Discov Nano. 2023 Mar 7;18(1):33. doi: 10.1186/s11671-023-03818-4.
7
Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure.利用ITO/Au/Au纳米颗粒/n-Si薄膜结构展示基于硅的短波红外光探测
Sensors (Basel). 2022 Jun 16;22(12):4536. doi: 10.3390/s22124536.
8
Enhancing Hot-Electron Photodetection of a TiO/Au Schottky Junction by Employing a Hybrid Plasmonic Nanostructure.通过采用混合等离子体纳米结构增强TiO/Au肖特基结的热电子光电探测
Materials (Basel). 2022 Apr 8;15(8):2737. doi: 10.3390/ma15082737.
9
Plasmon-Enhanced Photoresponse of Self-Powered Si Nanoholes Photodetector by Metal Nanowires.金属纳米线增强自供电硅纳米孔光电探测器的表面等离子体激元光响应
Nanomaterials (Basel). 2021 Sep 21;11(9):2460. doi: 10.3390/nano11092460.
10
Fabrication of an Efficient Planar Organic-Silicon Hybrid Solar Cell with a 150 nm Thick Film of PEDOT: PSS.采用150纳米厚的聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐薄膜制备高效平面有机-硅混合太阳能电池
Micromachines (Basel). 2019 Sep 26;10(10):648. doi: 10.3390/mi10100648.