Flexible, Fatigue-Free, and Large-Scale BiLaTiO Ferroelectric Memories.

Flexible, fatigue-free, large-scale, and nonvolatile memory is an emerging technological goal in a variety of fields, including electronic skins, wearable devices, and other flexible electronics. Perovskite oxide films deposited on rigid substrates (e.g., Si and SrTiO) at 500-700 °C and >1.0 Pa oxygen ambience have been widely used in electronic industries. However, their applications in flexible electronics are challenging, if not impossible. Here, the BiLaTiO ferroelectric films with SrRuO or Pt electrodes were prepared on the two-dimensional mica substrates, and then the flexible Pt/SrRuO/BiLaTiO/Pt memories have been achieved through reducing the mica to ∼10 μm thickness. These memories show the saturated polarization of P ∼ 20 μC/cm, and either the <1% bending strain or a normal light illumination hardly overcomes the potential barrier among different polarizations which originate from the noncentral symmetry of the atomic structure. As a result, they can undergo 10 write/erase cycles and/or 10000 times bending with 1.4 mm in radius without any fatigue or damage. Furthermore, they can withstand the operation at 20-200 °C or under light illumination. In short, these flexible oxide memories provide comprehensive performance for industrial applications.