State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 611731 , China.
Institute of Chemical Materials , China Academy of Engineering Physics , Mianyang 621000 , China.
ACS Appl Mater Interfaces. 2018 Jun 27;10(25):21582-21589. doi: 10.1021/acsami.8b08120. Epub 2018 Jun 14.
In this study, reactive B/Ti nano-multilayers were fabricated by magnetron sputtering and the structure and chemical composition were confirmed by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The periodic multilayer structure can be clearly visible, and the multilayer material is composed of B layers (amorphous), Ti layers (nano-polycrystalline), and intermixed reactants in a metastable system. The as-deposited B/Ti nano-multilayers exhibit a significantly high heat release of 3722 J/g, with an onset reaction temperature of 449 °C. On the basis of these properties, an integrated microigniter was designed and prepared by integration of the B/Ti nano-multilayers with a TaN film bridge for potential applications in plasma generation, and the electric ignition processes were investigated with discharge voltages ranging from 25 to 40 V. The integrated microigniter exhibits improved and stable ignition performances with a short burst time, high plasma temperature, and violent explosion phenomenon in comparison with the TaN film igniter. Overall, the plasma generation of the microigniter can be enhanced substantially by integration with the B/Ti nano-multilayers.
在这项研究中，通过磁控溅射制备了反应性 B/Ti 纳米多层膜，并通过透射电子显微镜和 X 射线光电子能谱分析确认了其结构和化学成分。可以清楚地看到周期性的多层结构，多层材料由 B 层（非晶态）、Ti 层（纳米多晶）和亚稳体系中的混合反应物组成。沉积的 B/Ti 纳米多层膜表现出非常高的释热率为 3722 J/g，起始反应温度为 449°C。基于这些特性，通过将 B/Ti 纳米多层膜与 TaN 薄膜桥集成，设计并制备了集成微点火器，用于等离子体产生的潜在应用，并研究了放电电压为 25 至 40 V 时的电点火过程。与 TaN 薄膜点火器相比，集成微点火器具有较短的爆发时间、较高的等离子体温度和剧烈的爆炸现象，从而改善和稳定了点火性能。总体而言，通过与 B/Ti 纳米多层膜集成，可以显著增强微点火器的等离子体产生。
