Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Nanoscale. 2018 Jun 21;10(24):11397-11402. doi: 10.1039/c8nr03427c.
Although many studies have been carried out on the doping of transition metal dichalcogenides (TMDCs), introducing controllable amounts of dopants into a TMD lattice is still insufficient. Here we demonstrate doping controlled TMDC growth by the replacement of selenium with phosphorus during the synthesis of the monolayer WSe2. The phosphorus doping density was precisely controlled by fine adjustment of the amount of P2O5 dopant powder along the pre-annealing time. Raman spectroscopy, photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and high-angle annular bright field scanning tunneling electron microscopy (HAADF STEM) provide evidence that P doping occurs within the WSe2 crystal with P occupying the substitutional Se sites. With regard to its electrical characteristics, the hole majority current of P-doped WSe2 is 100-times higher than that of the intrinsic WSe2. The measured doping concentration ranged from ∼8.16 × 1010 to ∼1.20 × 1012 depending on the amount of P2O5 dopant powder by pre-annealing.
虽然已经有许多关于过渡金属二卤化物（TMDC）掺杂的研究，但在 TMD 晶格中引入可控数量的掺杂剂仍然不足。在这里，我们通过在单层 WSe2 的合成过程中用磷取代硒来证明掺杂控制的 TMDC 生长。通过精细调整预退火时间沿磷源（P2O5）掺杂粉末的量来精确控制磷掺杂密度。拉曼光谱、光致发光（PL）、X 射线光电子能谱（XPS）和高角环形暗场扫描隧道电子显微镜（HAADF STEM）证明 P 掺杂发生在 WSe2 晶体内部，P 占据取代的 Se 位。关于其电学特性，P 掺杂的 WSe2 的空穴多数电流比本征 WSe2 高 100 倍。通过预退火，所测量的掺杂浓度范围约为 8.16×1010 到 1.20×1012，具体取决于 P2O5 掺杂粉末的量。
