Fert Beijing Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Xueyuan Road 37, Beijing 100191, China.
Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA.
Phys Rev Lett. 2018 May 25;120(21):217202. doi: 10.1103/PhysRevLett.120.217202.
We observe strong interlayer magnon-magnon coupling in an on-chip nanomagnonic device at room temperature. Ferromagnetic nanowire arrays are integrated on a 20-nm-thick yttrium iron garnet (YIG) thin film strip. Large anticrossing gaps up to 1.58 GHz are observed between the ferromagnetic resonance of the nanowires and the in-plane standing spin waves of the YIG film. Control experiments and simulations reveal that both the interlayer exchange coupling and the dynamical dipolar coupling contribute to the observed anticrossings. The coupling strength is tunable by the magnetic configuration, allowing the coherent control of magnonic devices.
我们在室温下的片上纳米磁学器件中观察到强烈的层间磁子-磁子耦合。铁磁纳米线阵列集成在 20nm 厚的钇铁石榴石(YIG)薄膜条上。在纳米线的铁磁共振和 YIG 薄膜的面内驻波之间观察到高达 1.58GHz 的大反交叉间隙。控制实验和模拟表明,层间交换耦合和动态偶极耦合都对观察到的反交叉做出了贡献。耦合强度可以通过磁配置进行调节,从而实现对磁子器件的相干控制。