Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
Adv Mater. 2018 Jul;30(30):e1801232. doi: 10.1002/adma.201801232. Epub 2018 Jun 10.
High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques.
高性能光子非易失性存储器将光感测和数据存储与低功耗相结合，确保了计算机系统的能源效率。本研究首次报道了原位衍生的磷烯/ZnO 混合异质结纳米粒子及其在宽带响应光子非易失性存储器中的应用。该光子非易失性存储器在紫外（380nm）到近红外（785nm）范围内表现出一致的宽带响应，可对 SET 电压进行可控调节。宽带阻变开关归因于光子捕获能力的增强、快速激子分离以及纳米异质结中氧空位丝的形成。此外，与已报道的原始磷烯基非易失性存储器相比，该器件在暴露于空气中时表现出优异的稳定性。优异的抗氧化能力源于磷烯中孤对电子的快速转移。磷烯/ZnO 纳米异质结的独特组装为多功能宽带响应数据存储技术铺平了道路。
