Nanusens, Av. del Parc Tecnològic 3, CENT ⁻ Parc Tecnològic del Vallès, 08290 Cerdanyola del Vallès, Spain.
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
Sensors (Basel). 2018 Jun 30;18(7):2111. doi: 10.3390/s18072111.
In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 μg and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress.
在本文中，我们分享了在 IHP SG25 技术中开发 CMOS-MEMS（互补金属氧化物半导体微机电系统）器件过程中获得的实际经验。实验原型制作过程通过三个 CMOS-MEMS 芯片的示例进行说明，从粗略的工艺探索和特性描述开始，然后定义有用的 MEMS 设计空间，最终达到惯性质量高达 4.3μg、共振频率低至 4.35kHz 的 CMOS-MEMS 器件。此外，所提出的设计技术有助于避免由于应力导致的层分层、器件粘连、钝化层断裂或器件开裂等结构和可靠性问题。
