Qu Hongwei
Department of Electrical and Computer Engineering, Oakland University, 2200 N. Squirrel Road, Rochester, MI 48309, USA.
Micromachines (Basel). 2016 Jan 21;7(1):14. doi: 10.3390/mi7010014.
This paper reviews CMOS (complementary metal-oxide-semiconductor) MEMS (micro-electro-mechanical systems) fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator) CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.
本文综述了互补金属氧化物半导体（CMOS）微机电系统（MEMS）制造技术以及由此实现的各种传感器和致动器的微型器件。这些技术根据CMOS电路和MEMS元件的制造顺序进行分类，同时单独介绍绝缘体上硅（SOI）CMOS MEMS。相关器件的介绍紧跟各自CMOS MEMS技术的描述之后。由于CMOS MEMS器件种类繁多，本综述仅关注最典型的MEMS传感器和致动器，包括压力传感器、惯性传感器、频率参考器件以及利用不同物理效应的致动器及其引入的制造工艺。此外，MEMS与CMOS的结合仅限于单片集成，这意味着基于晶圆键合的堆叠和其他集成方法，尽管它们具有优势，但不在讨论范围内。文中涵盖了CMOS MEMS具有竞争力的工业产品和最新研究成果。
